Ultra-low Power FinFET SRAM Cell with Improved Stability Suitable for Low Power Applications
In this paper, a new 11T SRAM cell using FinFET technology has been proposed, the basic component of the cell is the 6T SRAM cell with 4 NMOS access transistors to improve the stability and also makes it a dual port memory cell. The proposed cell uses a header scheme in which one extra PMOS transist...
| Published in: | International Journal of Electronics and Telecommunications |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Polish Academy of Sciences
2019-11-01
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| Subjects: | |
| Online Access: | https://journals.pan.pl/Content/113323/PDF/81.pdf |