A Closed-Loop Current Source Gate Driver With Active Gate Current Control for Dynamic Voltage Balancing in Series-Connected GaN HEMTs

The voltage rating of commercial Gallium Nitride (GaN) power semiconductors is limited to 600/650 V because of the lateral structure. Stacking low-voltage switches is an effective way to block higher dc-link voltage. However, unbalanced voltage sharing can occur even with well-matched gat...

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Bibliographic Details
Published in:IEEE Open Journal of Power Electronics
Main Authors: Zhengda Zhang, Chunhui Liu, Yunpeng Si, Yifu Liu, Mengzhi Wang, Qin Lei
Format: Article
Language:English
Published: IEEE 2021-01-01
Subjects:
Gallium nitride
HEMTs
stacking
closed-loop
current control
driver circuits
Online Access:https://ieeexplore.ieee.org/document/9527161/

Internet

https://ieeexplore.ieee.org/document/9527161/

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