Endurance and Retention Degradation of Intermediate Levels in Filamentary Analog RRAM

The understanding of the retention and endurance degradation behavior of different levels of filamentary analog RRAM is critical for the development of the neuromorphic computing. This paper investigates the conductance distribution of different levels during retention and endurance tests. The low c...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:IEEE Journal of the Electron Devices Society
المؤلفون الرئيسيون: Meiran Zhao, Bin Gao, Yue Xi, Feng Xu, Huaqiang Wu, He Qian
التنسيق: مقال
اللغة:الإنجليزية
منشور في: IEEE 2019-01-01
الموضوعات:
Analog RRAM
reliability
retention
endurance
neuromorphic computing
الوصول للمادة أونلاين:https://ieeexplore.ieee.org/document/8846220/

الانترنت

https://ieeexplore.ieee.org/document/8846220/

مواد مشابهة