Residual Stresses and Micro‐voids Propel Metal Diffusion for Filament‐Based Memristors

Abstract Metal filamentation based mechanisms have the advantage of a high switching current ratio, yet typically require high switching voltages to activate the memristive device due to the primary mechanism of atomic vacancy filling and movement. Herein, Introducing non‐reactive nitrogen gas durin...

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Bibliographic Details

Published in:	Advanced Science
Main Authors:	Joel Y.Y. Loh, Jason Yuan, Samuel Moor‐Smith, Adam Glustein, Gloria Vytas, Will Taylor, Andres Lombo, Richard J. Curry, Nazir Pyarali Kherani
Format:	Article
Language:	English
Published:	Wiley 2025-06-01
Subjects:	memristor sputtering stress thin film
Online Access:	https://doi.org/10.1002/advs.202416305