A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching

A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper. During the freewheeling period, the MOS-channel diode with a low potential barrier constrains the reverse current flow...

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Bibliographic Details
Published in:Micromachines
Main Authors: Ping Li, Jingwei Guo, Shengdong Hu, Zhi Lin
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Subjects:
SiC MOSFET
MOS-channel diode
split-gate
bipolar degradation
reverse conduction
Online Access:https://www.mdpi.com/2072-666X/14/7/1282

Internet

https://www.mdpi.com/2072-666X/14/7/1282

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