Performance assessment of InGaAs–SOI–FinFET for enhancing switching capability using high-k dielectric

In this work, a high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs–SOI–FinFET) is presented for high-switching and ultra-low power applications at 7 nm gate length. Indium Gallium Arsenide (InGaAs) is a compound semiconductor that has gained attention in the field of semiconductor devices, in...

Full description

Bibliographic Details

Published in:	Memories - Materials, Devices, Circuits and Systems
Main Authors:	Priyanka Agrwal, Ajay Kumar
Format:	Article
Language:	English
Published:	Elsevier 2024-08-01
Subjects:	InGaAs FinFET SOI-FinFET C-FinFET Energy band Analog
Online Access:	http://www.sciencedirect.com/science/article/pii/S2773064624000203