Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Abstract Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven...

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Bibliographic Details
Published in:Advanced Science
Main Authors: Nils von den Driesch, Daniela Stange, Denis Rainko, Ivan Povstugar, Peter Zaumseil, Giovanni Capellini, Thomas Schröder, Thibaud Denneulin, Zoran Ikonic, Jean‐Michel Hartmann, Hans Sigg, Siegfried Mantl, Detlev Grützmacher, Dan Buca
Format: Article
Language:English
Published: Wiley 2018-06-01
Subjects:
GeSn
heterostructures
lasers
multi‐quantum wells
SiGeSn
Online Access:https://doi.org/10.1002/advs.201700955

Internet

https://doi.org/10.1002/advs.201700955

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