Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter

In order to analyze the causes and correlations of gate drive loss and switching loss of GaN MOSFET and Si MOSFET, a single-phase full-bridge inverter topology was proposed to build a power switch device efficiency test platform and the working efficiencies of GaN MOSFET and Si MOSFET at different s...

Full description

Bibliographic Details

Published in:	Kongzhi Yu Xinxi Jishu
Main Authors:	DENG Xiaoxiang, LI Peng, DAI Chaofan, YANG Ronghao
Format:	Article
Language:	Chinese
Published:	Editorial Office of Control and Information Technology 2017-01-01
Subjects:	single-phase full-bridge inverter wide bandgap enhanced GaN MOSFET switching loss gate drive loss
Online Access:	http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.06.010