Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter

• Published in: Kongzhi Yu Xinxi Jishu
• Main Authors: DENG Xiaoxiang, LI Peng, DAI Chaofan, YANG Ronghao
• Format: Article
• Language: Chinese
• Published: Editorial Office of Control and Information Technology 2017-01-01
• Subjects: single-phase full-bridge inverter; wide bandgap; enhanced GaN MOSFET; switching loss; gate drive loss
• Online Access: http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.06.010
• ISSN: 2096-5427

In order to analyze the causes and correlations of gate drive loss and switching loss of GaN MOSFET and Si MOSFET, a single-phase full-bridge inverter topology was proposed to build a power switch device efficiency test platform and the working efficiencies of GaN MOSFET and Si MOSFET at different switching frequencies and different temperatures were tested using the test platform. The experimental results show that the efficiecies of the inverter with enhanced GaN MOSFETs are respectively 1.47% and 1.6% higher than that of the inverter with Si MOSFETs at the switching frequencies of 50 kHz and 120 kHz . The efficiencies of the inverter with enhanced GaN MOSFETs are respectively 1.8%, 1.9%, 2.0% and 2.1% higher than that of the inverter with Si MOSFETs at different operating temperatures of 40 ℃ , 50 ℃ , 60 ℃ 70 ℃ . The results showed that the efficiency of enhanced GaN MOSFET is higher, with increasing switching frequency and higher working temperature.