The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET

Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. This is primarily due to their compatibility with CMOS technology and reliable switching characteristics. Previous studies have primarily concentrated on the endur...

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Bibliographic Details

Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	Junghyeon Hwang, Giuk Kim, Hongrae Joh, Jinho Ahn, Sanghun Jeon
Format:	Article
Language:	English
Published:	IEEE 2024-01-01
Subjects:	Hafnia ferroelectric ferroelectric FET (FeFET) depolarization field retention
Online Access:	https://ieeexplore.ieee.org/document/10734331/