Highly C‐axis Aligned ALD‐InGaO Channel Improving Mobility and Thermal Stability for Next‐Generation 3D Memory Devices

Abstract A way to obtain highly ordered and thermally stable crystalline In–Ga–O (IGO) thin films is reported by atomic layer deposition with novel bulky dimethyl[N‐(tert‐butyl)−2‐methoxy‐2‐methylpropan‐1‐amine] gallium precursor. The optimal cation composition for IGO (In:Ga = 4:1 at%) shows a pron...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Seong‐Hwan Ryu, Hye‐Mi Kim, Dong‐Gyu Kim, Jin‐Seong Park
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-03-01
Subjects:	atomic layer deposition high mobility highly aligned crystal structure indium gallium oxide semiconductor thermal stability thin film transistors
Online Access:	https://doi.org/10.1002/aelm.202400377