Electronic Structure and Optical Properties of GaAs Doped with Rare-Earth Elements (Sc, Y, La, Ce, and Pr)

Herein, the electronic structure and optical properties of GaAs doped with rare-earth elements (Sc, Y, La, Ce, and Pr) were evaluated using the first-principles method. Results showed that the lattice constants and cell volume of GaAs increased after doping. Band structure calculations indicated tha...

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Bibliographic Details

Published in:	Crystals
Main Authors:	Yongrong Deng, Chunhong Zhang, Xinmao Qin, Wanjun Yan
Format:	Article
Language:	English
Published:	MDPI AG 2025-01-01
Subjects:	rare-earth element GaAs electronic structure optical properties
Online Access:	https://www.mdpi.com/2073-4352/15/1/98