| Summary: | Titanium carbide was synthetized by sputtering graphite target on heated titanium substrate by magnetron sputtering process. The obtained samples were characterized by X-ray diffraction (XRD) analysis and Raman spectroscopy, the elemental analysis was made by Energy-dispersive X-ray spectroscopy (EDX). Titanium carbide (TiC) structure was obtained by deposition of sputtered carbon atoms and clusters to the resistively heated titanium substrate surface with temperatures 700В В°C, 800В В°C, 900В В°C and 1000В В°C. The XRD analysis showed that the formation of TiC structure is take place when the substrate is heated to 1000В В°C. The Raman spectroscopy showed that when the incident power of laser is 100В % (35В mW) the structure is unstable in samples with the substrate temperatures 700В В°C, 800В В°C and 900В В°C and the most stable titanium carbide structure is created when the substrate temperature is 1000В В°C.
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