Recent research progress of SiC superjunction devices
Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power. Although SiC power diodes and metal-oxide-semiconductor field effect transistors (MOSFETs) have good device performance...
| Published in: | 机车电传动 |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | Chinese |
| Published: |
Editorial Department of Electric Drive for Locomotives
2023-09-01
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| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.004 |