High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure
| Published in: | ACS Omega |
|---|---|
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
American Chemical Society
2025-02-01
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| Online Access: | https://doi.org/10.1021/acsomega.4c09994 |
