Hermeticity Analysis on SiC Cavity Structure for All-SiC Piezoresistive Pressure Sensor

The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate with shallow grooves based on a room temperature dire...

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發表在:	Sensors
Main Authors:	Baohua Tian, Haiping Shang, Lihuan Zhao, Dahai Wang, Yang Liu, Weibing Wang
格式:	Article
語言:	英语
出版:	MDPI AG 2021-01-01
主題:	all-silicon carbide (SiC) sealed cavity structure room temperature bonding hermeticity piezoresistive pressure sensor
在線閱讀:	https://www.mdpi.com/1424-8220/21/2/379