Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

In this paper, the microcavity effect in quantum dot infrared photodetectors (QDIPs) on a Si substrate, fabricated by means of metal wafer bonding (MWB) and epitaxial lift-off (ELO) processes, was demonstrated by comparing the photocurrent spectrum and the simulated absorption spectrum. Four QDIPs h...

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Bibliographic Details

Published in:	IEEE Photonics Journal
Main Authors:	Ho Sung Kim, G. H. Ryu, S. Y. Ahn, H. Y. Ryu, W. J. Choi
Format:	Article
Language:	English
Published:	IEEE 2019-01-01
Subjects:	Quantum dot infrared photodetector microcavity metal wafer bonding epitaxial lift-off.
Online Access:	https://ieeexplore.ieee.org/document/8606424/