Kim, H. S., Ryu, G. H., Ahn, S. Y., Ryu, H. Y., & Choi, W. J. (2019, January). Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques. IEEE Photonics Journal.
Chicagoスタイル(17版)引用形式Kim, Ho Sung, G. H. Ryu, S. Y. Ahn, H. Y. Ryu, , W. J. Choi. "Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques." IEEE Photonics Journal Jan. 2019.
MLA(9版)引用形式Kim, Ho Sung, et al. "Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques." IEEE Photonics Journal, Jan. 2019.