Challenges in modulation doping of n-type Ge/SiGe heterostructures: The role of epitaxial and thermal strain

N-type Ge-rich Ge/SiGe multi-quantum-wells on Si(001) substrates are a novel material system with great potential due to their compatibility with the CMOS standard. This class of strained quantum heterostructures exhibits different band edge minima in a narrow energy range. Thus, lattice deformation...

Full description

Bibliographic Details

Published in:	APL Materials
Main Authors:	E. Campagna, E. Talamas Simola, L. Di Gaspare, D. Marian, M. H. Zoellner, F. Berkmann, L. Baldassarre, M. Ortolani, G. Capellini, M. Virgilio, M. De Seta
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2025-06-01
Online Access:	http://dx.doi.org/10.1063/5.0259848