A Comparative Study of Electrical Characterization of P-Doped Distributed Bragg Reflectors Mirrors for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers
This paper presents an electrical analysis of various diameters of two p-types of GaAs/Al0.9Ga0.1As and two p-types of GaAs/Al0.3Ga0.7As/Al0.9Ga0.1As distributed Bragg reflectors (DBRs) mirrors structure grown on undoped and on p-doped GaAs, which affects the characteristics of 1300 nm vertical cavi...
| الحاوية / القاعدة: | ARO-The Scientific Journal of Koya University |
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| المؤلف الرئيسي: | |
| التنسيق: | مقال |
| اللغة: | الإنجليزية |
| منشور في: |
Koya University
2021-06-01
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://aro.koyauniversity.org/index.php/aro/article/view/741 |