Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Abstract The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Amine Slassi, Linda‐Sheila Medondjio, Andrea Padovani, Francesco Tavanti, Xu He, Sergiu Clima, Daniele Garbin, Ben Kaczer, Luca Larcher, Pablo Ordejón, Arrigo Calzolari
Format:	Article
Language:	English
Published:	Wiley-VCH 2023-04-01
Subjects:	devices DFT electrical characteristics Ginestra materials ovonic threshold switching
Online Access:	https://doi.org/10.1002/aelm.202201224