Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning

We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased at the semi-on state, and they suffered from the hot electron stress. The devices of hydrogen poisoning w...

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Bibliographic Details

Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang
Format:	Article
Language:	English
Published:	IEEE 2019-01-01
Subjects:	GaN HEMT hydrogen poisoning hot electron stress
Online Access:	https://ieeexplore.ieee.org/document/8521669/