AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment

The effects of a corona-discharge plasma treatment on the performance of an AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor fabricated onto Si substrates were studied. The threshold voltage shifted from −8.15 to −4.21 V when the device was treated with an Al2O3 layer. The leaka...

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Bibliographic Details

Published in:	Crystals
Main Authors:	Shuo-Huang Yuan, Feng-Yeh Chang, Dong-Sing Wuu, Ray-Hua Horng
Format:	Article
Language:	English
Published:	MDPI AG 2017-05-01
Subjects:	corona-discharge plasma AlGaN GaN metal-oxide-semiconductor high-electron mobility transistor Al2O3
Online Access:	http://www.mdpi.com/2073-4352/7/5/146