Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition

As a high-k material, hafnium oxide (HfO2) has been used in gate dielectrics for decades. Since the discovery of polar phase in Si-doped HfO2 films, chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric phase in HfO2 based thin films. However, the extra...

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Bibliographic Details

Published in:	Journal of Materiomics
Main Authors:	Yongjian Luo, Zhenxun Tang, Xiaozhe Yin, Chao Chen, Zhen Fan, Minghui Qin, Min Zeng, Guofu Zhou, Xingsen Gao, Xubing Lu, Jiyan Dai, Deyang Chen, Jun-Ming Liu
Format:	Article
Language:	English
Published:	Elsevier 2022-03-01
Subjects:	Hafnium oxide Pulsed laser deposition Ferroelectricity Orthorhombic phase
Online Access:	http://www.sciencedirect.com/science/article/pii/S2352847821001398