Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition

As a high-k material, hafnium oxide (HfO2) has been used in gate dielectrics for decades. Since the discovery of polar phase in Si-doped HfO2 films, chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric phase in HfO2 based thin films. However, the extra...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:	Journal of Materiomics
المؤلفون الرئيسيون:	Yongjian Luo, Zhenxun Tang, Xiaozhe Yin, Chao Chen, Zhen Fan, Minghui Qin, Min Zeng, Guofu Zhou, Xingsen Gao, Xubing Lu, Jiyan Dai, Deyang Chen, Jun-Ming Liu
التنسيق:	مقال
اللغة:	الإنجليزية
منشور في:	Elsevier 2022-03-01
الموضوعات:	Hafnium oxide Pulsed laser deposition Ferroelectricity Orthorhombic phase
الوصول للمادة أونلاين:	http://www.sciencedirect.com/science/article/pii/S2352847821001398

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