Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries

In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM), based on polycrystalline silicon (poly-Si) nanotube structure with a grain boundary (GB), is designed and analyzed using technology computer-aided design (TCAD) simulation. In the proposed 1T-DRAM, the 1T-DRAM cell...

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Bibliographic Details

Published in:	Nanomaterials
Main Authors:	Jin Park, Sang-Ho Lee, Ga-Eon Kang, Jun-Hyeok Heo, So-Ra Jeon, Min-Seok Kim, Seung-Ji Bae, Jeong-Woo Hong, Jae-won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man Kang
Format:	Article
Language:	English
Published:	MDPI AG 2023-07-01
Subjects:	polycrystalline silicon one-transistor dynamic random-access memory grain boundary nanotube metal–oxide–semiconductor field-effect transistor dual-gate
Online Access:	https://www.mdpi.com/2079-4991/13/13/2026