High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion

We report that, for the first time, a low-temperature GaN (LT-GaN) layer prepared by metal–organic chemical vapor deposition (MOCVD) regrowth was used as a Mg stopping layer (MSL) for a GaN trench current–aperture vertical electron transistor (CAVET) with p-GaN as a carrier blocking layer (CBL). Ins...

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Bibliographic Details

Published in:	Crystals
Main Authors:	Xinyi Wen, Kwang Jae Lee, Yusuke Nakazato, Jaeyi Chun, Srabanti Chowdhury
Format:	Article
Language:	English
Published:	MDPI AG 2023-04-01
Subjects:	gallium nitride (GaN) current aperture vertical electron transistor (CAVET) trench CAVET GaN vertical transistor Mg memory effect diffusion
Online Access:	https://www.mdpi.com/2073-4352/13/4/709