Study on ESD characteristics of T-shape gate GaN HEMT microwave devices

The failure mechanisms and influencing factors of Si-based GaN HEMT devices under ESD events were systematically investigated. The study analyzed the failure voltage distribution of the devices under various bias conditions and utilized EMMI to pinpoint abnormal regions responsible for device degrad...

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Bibliographic Details

Published in:	Dianzi Jishu Yingyong
Main Authors:	Ni Zhiyuan, Bai Lin, Ling Gang, Bao Cheng, Zhang Junyun
Format:	Article
Language:	Chinese
Published:	National Computer System Engineering Research Institute of China 2025-04-01
Subjects:	gan hemt t-shape gate gate foot and gate head total gate width
Online Access:	http://www.chinaaet.com/article/3000171272