Flexible and Reliable Parylene‐C Resistive Random Access Memory Array with Graphene Barrier for Neuromorphic Systems

Flexible parylene‐C (PPXC)‐based resistive random access memory (RRAM) has garnered attention as a synaptic device suitable for flexible neuromorphic systems due to its low‐power consumption and high‐speed switching characteristics. However, Negative‐SET has been a key factor contributing to reliabi...

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Bibliographic Details

Published in:	Small Structures
Main Authors:	Seonjeong Lee, Sookyeong Kim, Boram Kim, Rayoung Park, Dong‐Wook Park, Yoon Kim
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-08-01
Subjects:	graphene Negative‐SET neuromorphic parylene‐C resistive random access memories
Online Access:	https://doi.org/10.1002/sstr.202500056