Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE

The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of full...

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書誌詳細

出版年:	Nanomaterials
主要な著者:	Adriana Rodrigues, Anagha Kamath, Hannah-Sophie Illner, Navid Kafi, Oliver Skibitzki, Martin Schmidbauer, Fariba Hatami
フォーマット:	論文
言語:	英語
出版事項:	MDPI AG 2025-07-01
主題:	epitaxial GaAs on Si nanoheteroepitaxy defects Si photonics
オンライン･アクセス:	https://www.mdpi.com/2079-4991/15/14/1083