28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview

In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The devices under test were fabricated on 300 mm wafers at GlobalFoundries. The fabricated devices demonstrate 103WRITE-endurance cycl...

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Bibliographic Details

Published in:	Memories - Materials, Devices, Circuits and Systems
Main Authors:	Yannick Raffel, Franz Müller, Sunanda Thunder, Masud Rana Sk, Maximilian Lederer, Luca Pirro, Sven Beyer, Konrad Seidel, Bhaswar Chakrabarti, Thomas Kämpfe, Sourav De
Format:	Article
Language:	English
Published:	Elsevier 2023-07-01
Subjects:	FeFET HfO2 Ferroelectric memory Artificial synapse 28 nm-HKMG Hafnium oxide
Online Access:	http://www.sciencedirect.com/science/article/pii/S2773064623000257