Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors

Abstract Beta gallium oxide (β‐Ga2O3) is an ultra‐wide‐bandgap semiconductor with advantages for high‐power electronics. However, the power resistance of β‐Ga2O3‐based devices is still much lower than its material limit due to its flat band dispersion at its valence band maximum (VBM) and the diffic...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Xian‐Hu Zha, Yu‐Xi Wan, Shuang Li, Dao Hua Zhang
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-01-01
Subjects:	direct bandgap enhanced valence energy reduced hole mass ultra‐wide bandgap β‐(RhxGa1‐x)2O3
Online Access:	https://doi.org/10.1002/aelm.202400547