Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured. The relationship between polarization Coulomb field (PCF) scattering and the subthresh...

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發表在:	Journal of Physics Communications
Main Authors:	Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin
格式:	Article
語言:	英语
出版:	IOP Publishing 2025-01-01
主題:	2DEG enhancement mode TCAD subthreshold swing p-GaN/AlGaN/GaN HEMT electron mobility
在線閱讀:	https://doi.org/10.1088/2399-6528/add5b8