Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off

We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 μm GaAs buffer layer was first grown on Si as a virtual substrate, and a threading dislocation density of 1.8 × 10<s...

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Bibliographic Details

Published in:	Applied Sciences
Main Authors:	Seungwan Woo, Geunhwan Ryu, Taesoo Kim, Namgi Hong, Jae-Hoon Han, Rafael Jumar Chu, Jinho Bae, Jihyun Kim, In-Hwan Lee, Deahwan Jung, Won Jun Choi
Format:	Article
Language:	English
Published:	MDPI AG 2022-01-01
Subjects:	solar cell flexible photovoltaics wafer bonding epitaxial lift-off heteroepitaxial growth
Online Access:	https://www.mdpi.com/2076-3417/12/2/820