Excitonic States in GaAs/Al<i><sub>x</sub></i>Ga<sub>1−</sub><i><sub>x</sub></i>As Quantum Wells: Direct Coulomb Interaction Modeling via Finite Element Electrostatics and Parametric Analysis Under Impurity and Field Effects

This study presents a comprehensive numerical investigation of excitonic states in GaAs quantum wells embedded in <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>Al</mi><mi>x</mi&g...

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Bibliographic Details
Published in:Nanomaterials
Main Authors: Fabian Andres Castaño, David Laroze, Carlos Alberto Duque
Format: Article
Language:English
Published: MDPI AG 2025-09-01
Subjects:
exciton
quantum well
binding energy
shallow impurities
finite element method
COMSOL-Multiphysics
Online Access:https://www.mdpi.com/2079-4991/15/17/1345

Internet

https://www.mdpi.com/2079-4991/15/17/1345

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