The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process

<p>Abstract</p> <p>Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg nanowires are extracted with the variation of width. Using this structure, Seebeck coefficients are me...

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Bibliographic Details

Published in:	Nanoscale Research Letters
Main Authors:	Choi Sung-Jin, Jang Moongyu, Park Youngsam, Jun Myungsim, Hyun Younghoon, Zyung Taehyoung
Format:	Article
Language:	English
Published:	SpringerOpen 2010-01-01
Subjects:	Thermoelectric effect Seebeck coefficient Silicon Nanowire
Online Access:	http://dx.doi.org/10.1007/s11671-010-9690-2