Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

Abstract The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of...

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Bibliographic Details

Published in:	Nanoscale Research Letters
Main Authors:	Furqan Zahoor, Fawnizu Azmadi Hussin, Usman Bature Isyaku, Shagun Gupta, Farooq Ahmad Khanday, Anupam Chattopadhyay, Haider Abbas
Format:	Article
Language:	English
Published:	SpringerOpen 2023-03-01
Subjects:	Resistive random access memory (RRAM) High-density memory Power dissipation Emerging memory technologies 2D materials Neuromorphic computing
Online Access:	https://doi.org/10.1186/s11671-023-03775-y