X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

Abstract This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. To enhance efficiency, a novel quasi Class‐F output matching circuit is proposed. Dyn...

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Bibliographic Details
Published in:Electronics Letters
Main Authors: Junhyung Jeong, Kyujun Cho, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung‐gue Min, Dongmin Kang
Format: Article
Language:English
Published: Wiley 2024-05-01
Subjects:
microwave amplifiers
monolithic microwave integrated circuit power amplifiers
solid modelling
Online Access:https://doi.org/10.1049/ell2.13221

Internet

https://doi.org/10.1049/ell2.13221

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