Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices

The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth cond...

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Bibliographic Details

Published in:	IEEE Photonics Journal
Main Authors:	M. A. Majid, M. Hugues, S. Vézian, D. T. D. Childs, R. A. Hogg
Format:	Article
Language:	English
Published:	IEEE 2012-01-01
Subjects:	Growth parameters quantum dot (QD) superluminescent diode (SLD) spectral bandwidth
Online Access:	https://ieeexplore.ieee.org/document/6332455/