Annealing effect on I-V characteristic of n-ZnO – p-InSe heterojunction
The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure. Indium monoselenide (InSe) is a semiconductor of the A3B6 group of layered compounds. The basic unit consists of two planes of meta...
| Published in: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
|---|---|
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2015-12-01
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| Subjects: | |
| Online Access: | https://tkea.com.ua/index.php/journal/article/view/265 |