AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers

This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO<sub>2</sub> is used to form the dielectric and passivation layers. The TiO<sub>2</sub> film is characterized using X-ray photoemission spectroscopy (XPS), Ra...

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Bibliographic Details
Published in:Micromachines
Main Authors: Yu-Shyan Lin, Chi-Che Lu
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Subjects:
MOS-HEMT
AlGaN
GaN
silicon substrate
TiO<sub>2</sub>
passivation
Online Access:https://www.mdpi.com/2072-666X/14/6/1183
Description
Summary:This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO<sub>2</sub> is used to form the dielectric and passivation layers. The TiO<sub>2</sub> film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). The quality of the gate oxide is improved by annealing at 300 °C in N<sub>2</sub>. Experimental results indicate that the annealed MOS structure effectively reduces the gate leakage current. The high performance of the annealed MOS-HEMTs and their stable operation at elevated temperatures up to 450 K is demonstrated. Furthermore, annealing improves their output power characteristics.
ISSN:2072-666X

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