Modeling Electronic and Optical Properties of InAs/InP Quantum Dots
A theoretical investigation of electronic properties of self-assembled InAs/InP quantum dots (QDs) is presented, utilizing a novel two-step modeling approach derived from a double-capping procedure following QD growth processes, a method pioneered in this study. The electronic band structure of the...
| الحاوية / القاعدة: | Photonics |
|---|---|
| المؤلفون الرئيسيون: | , , |
| التنسيق: | مقال |
| اللغة: | الإنجليزية |
| منشور في: |
MDPI AG
2024-08-01
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | https://www.mdpi.com/2304-6732/11/8/749 |