Optimization of Guard Ring Structures for Superior Dark Current Reduction and Improved Quantum Efficiency in InGaAs/InP APDs

Avalanche photodiodes (APDs) based on InGaAs/InP are pivotal for applications in low-light detection, yet their performance is often hindered by edge breakdown and high dark currents. This study systematically optimizes guard ring structures to address these challenges, focusing on attached guard ri...

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Bibliographic Details
Published in:IEEE Journal of the Electron Devices Society
Main Authors: Zefang Xu, Yu Chang, Kai Qiao, Liyu Liu, Linmeng Xu, Mengyan Fang, Chang Su, Fei Yin, Jieying Wang, Tianye Liu, Ming Li, Dian Wang, Lizhi Sheng, Xing Wang
Format: Article
Language:English
Published: IEEE 2025-01-01
Subjects:
Avalanche photodetector
InGaAs/InP
guard ring
Zn diffusion
edge breakdown
Online Access:https://ieeexplore.ieee.org/document/11053970/

Internet

https://ieeexplore.ieee.org/document/11053970/

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