Radiation damage analysis in SiC microstructure by transmission electron microscopy
Microstructures of monolithic high purity SiC and SiC with sintering additives after neutron irradiation to a fluence of 2.0–2.5 × 1024 n/m2 (E > 0.1 MeV) at 333–363 K and after post-irradiation annealing up to 1673 K were observed using a transmission electron microscopy. Results showed that no...
| الحاوية / القاعدة: | Nuclear Engineering and Technology |
|---|---|
| المؤلفون الرئيسيون: | , , |
| التنسيق: | مقال |
| اللغة: | الإنجليزية |
| منشور في: |
Elsevier
2022-03-01
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | http://www.sciencedirect.com/science/article/pii/S1738573321005556 |