Study of Self Heating Effect in the wake of complete and partial bottom dielectric insertion under 5 nm Stacked Nanosheet Transistor

Beyond 7 nm technology nodes, a Stacked Nanosheet Field Effect Transistor (SNT) is a potential candidate to continue device scaling due to its higher ON/OFF current ratio and less Short Channel Effect than FinFET. However, its gate all-around structure with low thermal conductive HiK oxide material...

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Bibliographic Details

Published in:	Memories - Materials, Devices, Circuits and Systems
Main Authors:	Vivek Kumar, Jyoti Patel, Arnab Datta, Sudeb Dasgupta
Format:	Article
Language:	English
Published:	Elsevier 2023-07-01
Subjects:	Self-Heating Effect Stacked Nanosheet Transistor Dielectric insertion
Online Access:	http://www.sciencedirect.com/science/article/pii/S2773064623000336