Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio

Abstract Wurtzite‐(Al,Sc)N films are promising candidates for ferroelectric memory devices owing to their outstanding properties. However, there are many challenges on the way to practical applications, including lowering an electric field required for polarization switching. Understanding the switc...

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書誌詳細

出版年:	Advanced Materials Interfaces
主要な著者:	Shinnosuke Yasuoka, Takao Shimizu, Kazuki Okamoto, Nana Sun, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Alexei Gruverman, Hiroshi Funakubo
フォーマット:	論文
言語:	英語
出版事項:	Wiley-VCH 2025-03-01
主題:	(Al,Sc)N films multiple layers Sc concentration switching kinetics
オンライン･アクセス:	https://doi.org/10.1002/admi.202400627