Simulation of electron transfer processes in a semiconductor structure using graphene and boron nitride

This paper presents the results of simulating the electron transfer processes in a three-dimensional semiconductor structure containing graphene and layers of boron hexagonal nitride using the Monte – Carlo method. Graphene is currently considered one of the most promising materials for the creation...

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التفاصيل البيبلوغرافية

الحاوية / القاعدة:	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
المؤلفون الرئيسيون:	V. V. Muravyov, V. N. Mishchenka
التنسيق:	مقال
اللغة:	الروسية
منشور في:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2020-11-01
الموضوعات:	graphene boron nitride electron transfer processes monte – carlo method
الوصول للمادة أونلاين:	https://doklady.bsuir.by/jour/article/view/2902