Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Resistive random access memory (RRAM) devices with Ni/AlO<sub>x</sub>/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlO<sub>x</sub>) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:Micromachines
المؤلفون الرئيسيون: Zongjie Shen, Yanfei Qi, Ivona Z. Mitrovic, Cezhou Zhao, Steve Hall, Li Yang, Tian Luo, Yanbo Huang, Chun Zhao
التنسيق: مقال
اللغة:الإنجليزية
منشور في: MDPI AG 2019-07-01
الموضوعات:
bipolar resistive switching characteristics
annealing temperatures
solution-based dielectric
resistive random access memory (RRAM)
الوصول للمادة أونلاين:https://www.mdpi.com/2072-666X/10/7/446

الانترنت

https://www.mdpi.com/2072-666X/10/7/446

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