Structural and electrical properties of AlGaN/GaN heterostructures grown on 2°-off-axis 4H–SiC epilayers

This paper reports on the structural and electrical properties of AlGaN/GaN heterostructures grown onto 2°-off-axis silicon carbide (4H–SiC) epitaxial layers. The quality of the grown heterostructures was assessed by a combination of different analytical techniques, revealing a density of conductive...

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Bibliographic Details

Published in:	APL Materials
Main Authors:	F. Roccaforte, G. Greco, C. Bongiorno, S. Di Franco, P. Fiorenza, F. Giannazzo, M. Mauceri, A. Severino, F. Iucolano, P. Prystawko, M. Krysko, M. Leszczynski
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2025-08-01
Online Access:	http://dx.doi.org/10.1063/5.0280427