The Influence of Traps on the Self-Heating Effect and THz Response of GaN HEMTs

This study systematically investigates the effects of trap concentration on self-heating and terahertz (THz) responses in GaN HEMTs using Sentaurus TCAD. Traps, inherently unavoidable in semiconductors, can be strategically introduced to engineer specific energy levels that establish competitive dyn...

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Bibliographic Details
Published in:Photonics
Main Authors: Huichuan Fan, Xiaoyun Wang, Xiaofang Wang, Lin Wang
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Subjects:
GaN HEMT
self-heating
traps
terahertz
TCAD
Online Access:https://www.mdpi.com/2304-6732/12/7/719

Internet

https://www.mdpi.com/2304-6732/12/7/719

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